JPS5615587B2 - - Google Patents
Info
- Publication number
- JPS5615587B2 JPS5615587B2 JP14856774A JP14856774A JPS5615587B2 JP S5615587 B2 JPS5615587 B2 JP S5615587B2 JP 14856774 A JP14856774 A JP 14856774A JP 14856774 A JP14856774 A JP 14856774A JP S5615587 B2 JPS5615587 B2 JP S5615587B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/652—Integrated injection logic using vertical injector structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/087—I2L integrated injection logic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/167—Two diffusions in one hole
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14856774A JPS5615587B2 (en]) | 1974-12-27 | 1974-12-27 | |
| US05/644,048 US4064526A (en) | 1974-12-27 | 1975-12-24 | I.I.L. with graded base inversely operated transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14856774A JPS5615587B2 (en]) | 1974-12-27 | 1974-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5182579A JPS5182579A (en]) | 1976-07-20 |
| JPS5615587B2 true JPS5615587B2 (en]) | 1981-04-10 |
Family
ID=15455622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14856774A Expired JPS5615587B2 (en]) | 1974-12-27 | 1974-12-27 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4064526A (en]) |
| JP (1) | JPS5615587B2 (en]) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52104084A (en) * | 1976-02-27 | 1977-09-01 | Toshiba Corp | Semiconductor unit |
| JPS5317081A (en) * | 1976-07-30 | 1978-02-16 | Sharp Corp | Production of i2l device |
| US4067038A (en) * | 1976-12-22 | 1978-01-03 | Harris Corporation | Substrate fed logic and method of fabrication |
| CA1116309A (en) * | 1977-11-30 | 1982-01-12 | David L. Bergeron | Structure and process for optimizing the characteristics of i.sup.2l devices |
| US4446611A (en) * | 1980-06-26 | 1984-05-08 | International Business Machines Corporation | Method of making a saturation-limited bipolar transistor device |
| US5021856A (en) * | 1989-03-15 | 1991-06-04 | Plessey Overseas Limited | Universal cell for bipolar NPN and PNP transistors and resistive elements |
| US5360750A (en) * | 1994-01-13 | 1994-11-01 | United Microelectronics Corp. | Method of fabricating lateral bipolar transistors |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7107040A (en]) * | 1971-05-22 | 1972-11-24 | ||
| DE2212168C2 (de) * | 1972-03-14 | 1982-10-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiteranordnung |
| DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
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1974
- 1974-12-27 JP JP14856774A patent/JPS5615587B2/ja not_active Expired
-
1975
- 1975-12-24 US US05/644,048 patent/US4064526A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4064526A (en) | 1977-12-20 |
| JPS5182579A (en]) | 1976-07-20 |